NXP BUK9217-75B: A Comprehensive Technical Overview of the 75 V, 170 A Logic Level Power MOSFET
The NXP BUK9217-75B represents a pinnacle of performance in the realm of logic-level Power MOSFETs, engineered to deliver exceptional power handling and efficiency in a robust package. Designed for demanding automotive and industrial applications, this MOSFET combines low on-resistance with high current capability, making it an ideal solution for high-power switching tasks such as in motor control, solenoid drivers, and advanced DC-DC converters.
Core Electrical Characteristics
At the heart of the BUK9217-75B's performance is its impressive low on-resistance (RDS(on)) of just 1.8 mΩ maximum at a gate-source voltage (VGS) of 10 V. This exceptionally low resistance is pivotal in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The device is rated for a continuous drain current (ID) of 170 A at a case temperature (TC) of 25°C, showcasing its ability to handle very high current loads. With a drain-source voltage (VDS) rating of 75 V, it offers sufficient headroom for 48 V battery systems and other high-voltage circuits commonly found in automotive environments.
Logic-Level Gate Drive and Switching Performance
A defining feature of this MOSFET is its true logic-level compatibility. It is fully enhanced at a gate-source voltage (VGS(th)) as low as 2.5 V, making it directly controllable by modern microcontrollers (MCUs), ASICs, and FPGAs without the need for additional level-shifting circuitry. This simplifies design, reduces component count, and accelerates switching speeds. The low gate charge (QG) and optimized internal structure ensure fast switching characteristics, which are critical for high-frequency PWM applications to minimize switching losses.
Robustness and Reliability
The BUK9217-75B is built for harsh operating conditions. It features an avalanche ruggedness specification, meaning it can withstand a certain amount of energy (EAS) during unclamped inductive switching (UIS) events, a common occurrence in motor and solenoid control. Housed in a TO-263-3 (D2PAK) surface-mount package, it provides an excellent balance between power dissipation capability and board space efficiency. The package is designed for effective thermal management, allowing heat to be efficiently transferred to the PCB or an external heatsink.
Target Applications
This MOSFET is particularly suited for a wide array of high-current switching applications. Key uses include:
Automotive Systems: Electronic power steering (EPS), electric brake systems, and advanced driver-assistance systems (ADAS).
Industrial Control: High-power motor drives, solenoids, and contactors.
Power Management: High-current DC-DC converters and power distribution modules.
ICGOODFIND Summary
The NXP BUK9217-75B is a high-performance, logic-level Power MOSFET that excels in blending extremely low on-resistance with high current capacity. Its direct compatibility with low-voltage control signals eliminates the need for interface circuitry, streamlining design. Coupled with its proven avalanche ruggedness and efficient package, it stands as a superior choice for engineers designing robust and efficient power systems in the automotive and industrial sectors.
Keywords:
1. Logic-Level MOSFET
2. Low RDS(on)
3. High Current Switching
4. Avalanche Ruggedness
5. Automotive Grade
