Infineon IPD30N10S3L-34: A 100V N-Channel Power MOSFET for High-Efficiency Automotive and Industrial Applications

The demand for highly efficient and robust power management solutions continues to grow across the automotive and industrial sectors. At the heart of many modern electronic systems, from electric power steering and braking to motor drives and DC-DC converters, lies the power MOSFET. The Infineon IPD30N10S3L-34 stands out as a premier component engineered to meet the stringent requirements of these demanding applications.

This device is a N-channel power MOSFET built using Infineon's advanced OptiMOS™ technology, which is renowned for its exceptional balance of low switching losses and high avalanche ruggedness. Rated for a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 30A, it offers a versatile solution for a wide range of medium-power circuits.

A key feature of the IPD30N10S3L-34 is its exceptionally low on-state resistance (RDS(on)). With a maximum value of just 34 mΩ at 10 V gate-source voltage, this MOSFET minimizes conduction losses. This translates directly into higher system efficiency, reduced heat generation, and the potential for smaller heatsinks, contributing to overall space and cost savings.

The device is specifically designed for automotive-grade reliability. It qualifies under the AEC-Q101 standard, ensuring it can withstand the harsh operating conditions found in vehicles, including extreme temperature fluctuations, high humidity, and intense vibration. This makes it an ideal choice for safety-critical applications like engine management, transmission control units, and advanced driver-assistance systems (ADAS).

Furthermore, its low gate charge (QG) and optimized internal gate resistance ensure fast switching capabilities. This is crucial for high-frequency switching regulators, where reducing switching losses is paramount to achieving peak efficiency. The MOSFET also features a low intrinsic body diode with good reverse recovery characteristics, further enhancing its performance in bridge topologies.

Packaged in a robust TO-252 (DPAK), the IPD30N10S3L-34 offers a excellent power-to-size ratio and is suitable for both through-hole and surface-mount assembly processes, providing design flexibility for various PCB layouts.

ICGOODFIND: The Infineon IPD30N10S3L-34 is a high-performance 100V MOSFET that delivers outstanding efficiency, robustness, and reliability. Its superior RDS(on), automotive qualification, and fast switching performance make it a top-tier choice for designers aiming to optimize power conversion systems in automotive and industrial environments.

Keywords: Power MOSFET, OptiMOS™ Technology, Low RDS(on), AEC-Q101, High-Efficiency Switching.