Infineon IRFB4310ZPBF N-Channel MOSFET: Datasheet, Application Circuit, and Pinout Configuration

The Infineon IRFB4310ZPBF is a robust N-Channel power MOSFET designed for high-power switching applications. Leveraging Infineon's advanced technology, this component is engineered to deliver exceptional efficiency and reliability in demanding circuits. It is a cornerstone in power management systems, finding extensive use in switch-mode power supplies (SMPS), motor control, and high-current DC-DC converters.

Datasheet Overview and Key Specifications

The datasheet for the IRFB4310ZPBF provides a comprehensive look at its electrical characteristics and absolute maximum ratings. Key parameters that define its performance include:

Drain-Source Voltage (Vds): 100 V

Continuous Drain Current (Id): 140 A at 25°C

Rds(on) (Max): A remarkably low 3.6 mΩ at 10 V gate drive, which is pivotal for minimizing conduction losses and improving thermal performance.

Power Dissipation (Pd): 580 W

Avalanche Energy Rated: This feature enhances its ruggedness, allowing it to withstand high-energy transient events.

These specifications highlight the MOSFET's capability to handle very high current levels with minimal voltage drop, making it an ideal choice for high-efficiency designs.

Application Circuit: A High-Current Switch

A common application for the IRFB4310ZPBF is as a high-side or low-side switch in a motor driver or power converter. A simplified circuit diagram for a low-side switch configuration is shown below.

```

Vload (e.g., 12-48V)

+

|

Load (e.g., Motor)

|

|

Drain _____|_____

| |

| |

(MOSFET) IRFB4310ZPBF

| |

Source |____|____ GND

|

|

Gate Driver

(PWM Signal)

|

GND

```

In this circuit:

1. The load (e.g., a motor) is connected between the positive supply rail (Vload) and the Drain pin of the MOSFET.

2. The Source pin is connected directly to ground.

3. A gate driver circuit is essential to rapidly switch the MOSFET on and off. It provides a strong voltage pulse (typically 10-12V) to the Gate pin, ensuring fast switching transitions to minimize switching losses.

4. A PWM (Pulse Width Modulation) signal from a microcontroller dictates the switching frequency and duty cycle, controlling the power delivered to the load.

Pinout Configuration

The IRFB4310ZPBF is offered in the industry-standard TO-220 package, which is renowned for its good thermal performance and ease of mounting to a heatsink. The pinout is standard for this package:

1. Gate (G): This is the control pin. Applying a voltage between the Gate and Source terminals creates an electric field that allows current to flow between the Drain and Source.

2. Drain (D): This is the input terminal connected to the higher voltage load supply. In the TO-220 package, this pin is typically connected to the metal tab, which must be isolated from the heatsink if the heatsink is grounded.

3. Source (S): This is the output terminal, commonly connected to ground in a low-side switch configuration.

ICGOODFIND Summary

The Infineon IRFB4310ZPBF stands out as a high-performance power MOSFET characterized by its extremely low on-resistance and high current handling capability. Its robust design, avalanche ruggedness, and standard TO-220 package make it a versatile and reliable solution for engineers designing high-power, high-efficiency switching applications across automotive, industrial, and renewable energy sectors.

Keywords: Power MOSFET, High Current Switching, Low Rds(on), Motor Control, TO-220 Package.