Intel PC28F640P30BF65: A Comprehensive Technical Overview of the 64-Megabit P30 Flash Memory Device

Release date:2025-11-18 Number of clicks:163

Intel PC28F640P30BF65: A Comprehensive Technical Overview of the 64-Megabit P30 Flash Memory Device

The Intel PC28F640P30BF65 stands as a significant component within the landscape of non-volatile memory solutions, representing the P30 series of advanced 64-Megabit (8-Megabyte) parallel interface flash memory devices. Engineered for high-performance applications requiring reliable and fast read/write operations, this device encapsulates a blend of density, speed, and robustness that made it a preferred choice for embedded systems, networking equipment, and telecommunications infrastructure during its era.

Architectural Foundation and Core Technology

At its core, the PC28F640P30BF65 is built on a symmetric memory array architecture, organized as 64 Megabits, typically configured as 8,388,608 words by 8 bits or 4,194,304 words by 16 bits. This flexibility in data bus width (x8/x16) allows for efficient integration into various system designs, optimizing for either byte-wide or word-wide data paths. The device is fabricated using Intel's reliable 0.13μm NOR Flash technology, which provides the foundation for its balanced performance characteristics—offering strong read performance, efficient program execution, and reliable sector erase capabilities.

A key feature of this family is the P30 Burst Mode functionality. This advanced read mode significantly enhances data throughput by allowing rapid sequential data access from internal memory locations. By employing a configurable burst sequence with wrap-around capabilities, the device minimizes the number of address cycles required, thereby reducing system latency and boosting overall read performance for code execution and data streaming.

Performance and Operational Characteristics

The device operates from a single 3.0V power supply (VCC) for the core logic and a separate 3.0V supply (VCCQ) for the output buffers, facilitating easy interfacing with low-voltage system logic. Its access times are remarkably fast, with the '65' speed grade offering a initial access time as low as 65ns and subsequent burst accesses at much higher speeds.

Programming and erase operations are managed through a firmware command-driven interface, which simplifies the control sequence for the host processor. The write operations—both program and erase—are executed with a high degree of automation internally, leveraging an intelligent internal state machine. This includes features like Write State Machine (WSM) control, which offloads timing-critical tasks from the system microcontroller, ensuring optimal pulse widths and verification cycles for enhanced reliability.

Enhanced Reliability and Data Integrity

Data integrity is paramount in non-volatile memory. The PC28F640P30BF65 incorporates several mechanisms to safeguard stored information. It features hardware and software data protection schemes that prevent accidental writes. The built-in Block Locking Registers allow for individual sectors to be locked or unlocked dynamically, providing flexible write protection against software errors or malicious attacks.

Furthermore, the device offers extended cycling endurance, typically rated for 100,000 program/erase cycles per sector, which is sufficient for most frequently updated code or data storage applications. For long-term storage, it guarantees data retention of up to 20 years, ensuring information remains intact even without power for extended periods.

System Integration and Application

The P30 device is designed for straightforward integration. It utilizes a standard asynchronous memory interface with common control signals like Chip Enable (CE), Output Enable (OE), and Write Enable (WE). Its JEDEC-standard pinout ensures a high degree of compatibility with other flash devices, simplifying board design and potential upgrades.

Typical applications leveraging its capabilities include:

Networking Equipment: Storing boot code, firmware, and configuration data in routers, switches, and hubs.

Telecommunication Systems: Used in base stations and communication controllers for reliable code storage.

Industrial Automation and Embedded Systems: Serving as solid-state storage for operating systems and application code in rugged environments.

Automotive Electronics: In applications requiring robust, non-volatile memory for critical systems.

ICGOOODFIND

The Intel PC28F640P30BF65 is a quintessential example of high-density, parallel NOR flash memory from its generation. Its combination of a flexible x8/x16 data bus, high-speed burst read capability, and robust reliability features made it a versatile and dependable solution for a wide array of demanding embedded applications. While newer serial interfaces and higher densities are now common, the architectural principles and performance benchmarks set by devices like the P30 continue to influence memory design.

Keywords: NOR Flash Memory, Burst Mode, Program/Erase Cycles, Block Locking, Non-volatile Storage

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